JPH048950B2 - - Google Patents
Info
- Publication number
- JPH048950B2 JPH048950B2 JP1189217A JP18921789A JPH048950B2 JP H048950 B2 JPH048950 B2 JP H048950B2 JP 1189217 A JP1189217 A JP 1189217A JP 18921789 A JP18921789 A JP 18921789A JP H048950 B2 JPH048950 B2 JP H048950B2
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- transistors
- artwork
- circuit
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000003321 amplification Effects 0.000 claims description 3
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 230000000295 complement effect Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1189217A JPH02290056A (ja) | 1989-07-21 | 1989-07-21 | 集積回路 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1189217A JPH02290056A (ja) | 1989-07-21 | 1989-07-21 | 集積回路 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2997280A Division JPS56125854A (en) | 1980-03-10 | 1980-03-10 | Integrated circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH02290056A JPH02290056A (ja) | 1990-11-29 |
JPH048950B2 true JPH048950B2 (en]) | 1992-02-18 |
Family
ID=16237524
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1189217A Granted JPH02290056A (ja) | 1989-07-21 | 1989-07-21 | 集積回路 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02290056A (en]) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3119177B2 (ja) * | 1996-10-24 | 2000-12-18 | 日本電気株式会社 | 半導体装置 |
JP2007134577A (ja) * | 2005-11-11 | 2007-05-31 | Toshiba Corp | 半導体装置 |
-
1989
- 1989-07-21 JP JP1189217A patent/JPH02290056A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH02290056A (ja) | 1990-11-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS6217876B2 (en]) | ||
EP0243603B1 (en) | Binary logic circuit | |
US6759728B1 (en) | Boost capacitor layout | |
JPH0552687B2 (en]) | ||
US5789781A (en) | Silicon-on-insulator (SOI) semiconductor device and method of making the same | |
JPS6043693B2 (ja) | 駆動回路 | |
US6188111B1 (en) | Dual gate semiconductor device for shortening channel length | |
JPH048950B2 (en]) | ||
JP2602974B2 (ja) | Cmos半導体集積回路装置 | |
JPH06275826A (ja) | 半導体装置 | |
JP3119177B2 (ja) | 半導体装置 | |
JPH0441505B2 (en]) | ||
JP2000012841A (ja) | 半導体装置 | |
JPH0535927B2 (en]) | ||
JPH0410659A (ja) | 薄膜トランジスタ | |
JP2800336B2 (ja) | 半導体アナログスイッチ | |
JP2002185012A (ja) | Soimosトランジスタを備えた半導体素子及び信号処理装置 | |
JPH06326307A (ja) | 半導体集積回路の入力回路装置及びその製造方法 | |
KR100271207B1 (ko) | 보조 트랜지스터를 구비한 고속/저전력 전계효과트랜지스터 | |
US6670683B2 (en) | Composite transistor having a slew-rate control | |
JPH07221196A (ja) | 高負荷駆動ドライバ用半導体集積装置及び高負荷駆動ドライバ装置 | |
JPH0532908B2 (en]) | ||
JPS59215766A (ja) | Mos集積回路装置 | |
JP2524686B2 (ja) | GaAs論理回路装置 | |
JPS63150957A (ja) | 半導体装置 |